| PART |
Description |
Maker |
| PHE844RR7220MR06L2 PHE844RR7150MR06L2 PHE844 PHE84 |
CAP 150PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
CAP 220PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
EMI suppressor, class X1, metallized polypropylene 电磁干扰抑制，类象X1，金属化聚丙
CAP 47PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 电磁干扰抑制，类象X1，金属化聚丙
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA19N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD18N20V2 FQU18N20V2 FQD18N20V2TF FQD18N20V2TM FQ |
200V N-Channel Advanced QFET V2 series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW610B IRFI610B IRFI610BTUFP001 IRFW610BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW610A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFI610A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
